Home Research activities Microelectronics
Notice
  • Joom!Fish extension not installed correctly. Plugin not executed
  • Joom!Fish extension not installed correctly. Plugin not executed
Microelectronics PDF Print E-mail
Written by Administrator   
Sunday, 03 January 2010 07:56

In the field of Microelectronics the group works on device characterization and linear and non-linear modelling of low and high frequency semiconductor devices such as Diodes, FETs, MOS Capacitors, CMOS Transistors, MOSFET Devices, RF Transistors, Nanoscale Wires and Tubes, Integrated Circuits, etc.

Within these fields the major research activities of the MicTel Lab Group are focused in the following research areas:

  • Electrical Characterization (DC, AC, RF) of Microelectronic Devices
  • Electronic properties of semiconductor devices
  • Reliability of Microelectronic Devices
  • Device modelling
  • Mixed-signal electronics and communication circuits

The work carried out in this topic is well known and it has been divulged through the highest impact Scientific Journals, Technical Magazines and International Conferences and Workshops.

The MicTel characterization platform has a range of state-of-the-art scientific equipment and software that is available to MicTel Research Group, to academic laboratories and to industrial research through private service provision arrangements.

micro4

Electrical Characterization (DC, AC, RF) of Microelectronic Devices

Measurement Capabilities
I-V, Pulse I-V Measurements,
C-V, Quasistatic C-V, C-V Measurements versus frequency (1kHz-1GHz),
(Voltage/Current) Stress Measurements, Reliability Measurements,
Inductance Measurements, Charge-Pumping Measurements,
Sij, Pulsed Sij Measurements.

Chatacterization Techniques and special tools have been developed
Oxide Reliability Evaluation
Hot Carrier Induced Degradation of MOSFET Devices
Channel Hot Carrier (CHC) Degradation
Gate Dielectric Capacitance-Voltage Characterization
DC-AC Electrical Characterization of RF Power Transistors
Home-made DC set-up able to extract by direct measurement the access resistance, as well as the Schottky junction, of GaAs MESFET and HEMT's
I-V Pulse measurement set-up that allows to measure the dynamic characteristics of any low-frequency or microwave transistor under pulsed gate and drain voltage conditions
Linear and non-linear extraction software able of extracting the small and large-signal model of the device
I-V Measurements of Nanoscale Wires and Tubes

Material Characterization
Square resistance, contact resistance, mobility, differential mobility, (- Van der Paw technique, hall effect measurement)
Extraction of complex permittivity, permeability, and conductivity for high and low loss materials (- Microwave techniques up to 9GHz Free space, waveguide, propagation lines)
Study of deep centers, trap effects, interface charge, carrier density (- C(V) measurements versus frequency 1kHz-1GHz)

Device Characterization
DC and Small Signal Device Characterization
One VNA following the frequency range (- CW 10MHz up to 9GHz - Pulsed Sij 10MHz up to 9GHz)
Pulsed I-V (200V-4A) (- Thermal effects, lay effects, access resistance)
2 port vector measurements (true differential)
Breakdown analyses (- Diode configuration, transistor configuration (open and close channel))
Reliability measurements
RF Noise Device Characterization
Multi-impedance or Multi-frequency methods, Measurement from 10MHz up to 9GHz, Sub frequency bands are 10MHz-1GHz, 1-2GHz, 2-6GHz, 6-9GHz
Large Signal Device Characterization
One setup following the frequency range and the matching techniques (active or passive)
Frequency domain: CW 10MHz up to 9GHz, Pulsed 10MHz up to 9GHz, pulse or fix profile, Modulated signal 250MHz up to 6GHz
Time domain: CW 10MHz up to 9GHz, RF signal aggression, Measurement analysis and reverse engineering (passive and active devices, MMIC, systems, RF MEMS,...)
Linearity Device measurements
One setup following the frequency range, the matching techniques and the stimulus.
Stimulus: Two tones, Multi tones, NPR, Modulated signals, Measurement analysis and reverse engineering (memory effects, sweet spot, EVM, ACPR, IMR,...)

micro3

Device modelling

1. Small Signal Modelling
Models for passive and active structures
FET and bipolar based devices and circuit models: Si, GaAs, InP, GaN, SiC, Ge
Dispersive and memory effects
Noise description (up to 40GHz)
Temperature and self-heating dependant
Scalable model (total width and number of fingers)
Model for on wafer or test fixture devices
Different formats available (ADS, AWR, VHDL, verilog, user defined)
SPICE Modelling

2. Non Linear Modelling
FET and bipolar based devices and circuit models: Si, GaAs, InP, GaN, SiC, Ge
Different types of model: Electrical Equivalent Scheme, Empirical, Black Box, User defined
Scalable model (total width and number of fingers)
Models available up to 220GHz
Models for on wafer or test fixture devices
Temperature and self-heating dependant
Dispersive and memory effects
High linearity NL models
SPICE Modelling

 

 

Related Publications in Microelectronics

 

Last Updated on Monday, 04 January 2010 08:59